Improved Model on Buried-Oxide Damage Induced by Total-Ionizing-Dose Effect for HV SOI LDMOS
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چکیده
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ژورنال
عنوان ژورنال: IEEE Transactions on Electron Devices
سال: 2021
ISSN: 0018-9383,1557-9646
DOI: 10.1109/ted.2020.3045378